2SK3746

Ordering number : EN8283A 2SK3746 N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-3P-3L http://onsemi.com Features Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process) Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1 VDD=50V, L=20mH, IAV=2A (Fig.1) *2 L≤20mH, single pulse Tch Tstg EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 1500 ±20 2 4 2.5 110 150 --55 to +150 41 2 Unit V V A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7539-002 15.6 4.8 1.5 2SK3746-1E 3.2 7.0 16.76 10.0 3.5 5.0 20.0 19.9 18.4 2.0 3.0 1.0 123 5.45 5.45 1.4 13.6 0.6 1 : Gate 2 : Drain 3 : Source TO-3P-3L Product & Package Information Package : TO-3P-3L JEITA, JEDEC : SC-65, TO-247, SOT-199 Minimum Packing Quantity : 30 pcs./magazine Marking Electrical Connection K3746 LOT No. 2 1 3 Semiconductor Components Industries, LLC, 2013 July...