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2SK3759 Datasheet

Part Number 2SK3759
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3759 Datasheet2SK3759 Datasheet (PDF)

www.DataSheet4U.com 2SK3759 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y ) 2SK3759 unit•F‚•‚• Switching Regulator Applications • • • • Low drain-source ON resistance: R DS (ON) = 0.75ƒ¶ (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 ƒÊ A (V DS = 500 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) 3.84•}0.2 3.84•} 0 .2 10.5 10.5 max max 4.7 max 4.7 max 1.3 6.6 max 6.6 max. 1.3 Maximum Ratings (Ta = 25°C) .

  2SK3759   2SK3759






Part Number 2SK3759
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3759 Datasheet2SK3759 Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3759 FEATURES ·Drain Current : ID= 8.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 850mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Vo.

  2SK3759   2SK3759







N-Channel MOSFET

www.DataSheet4U.com 2SK3759 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y ) 2SK3759 unit•F‚•‚• Switching Regulator Applications • • • • Low drain-source ON resistance: R DS (ON) = 0.75ƒ¶ (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 ƒÊ A (V DS = 500 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) 3.84•}0.2 3.84•} 0 .2 10.5 10.5 max max 4.7 max 4.7 max 1.3 6.6 max 6.6 max. 1.3 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage DC (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Rating 500 500 ±30 8 32 Unit V 15.6 15.6 max. max 2.7 13.4 13.4 min. min 3.9 max 3.9 max. 1.5 max 1.5 max 0.81 0.81 max 0.45 0.45 V V 2.7 2.54 2.54 1 2 3 2.7 74 48 8 7.4 150 -55~150 W mJ A mJ °C °C 1. 2. 3. Gate Drain(HEAT SINK) Source JEDEC JEITA TOSHIBA SC-46 TO-220AB •\ Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.68 83.3 Unit °C/W °C/W Weight : 2.0g(typ.) Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 1.28 mH, IAR = 8 A, R G .


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