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2SK3760 Datasheet

Part Number 2SK3760
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3760 Datasheet2SK3760 Datasheet (PDF)

www.DataSheet4U.com 2SK3760 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y ) 2SK3760 unit•F‚•‚• Switching Regulator Applications 3.84•} 0 .2 3.84•}0.2 10.5 10.5max max 4.7max 4.7 max 1.3 6.6 max 6.6 max. 1.3 • • • • Low drain-source ON resistance: R DS (ON) = 1.7ƒ¶ (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 ƒÊ A (V DS = 600 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) 13.4 13.4min min. 3.9 max 3.

  2SK3760   2SK3760






Part Number 2SK3767
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3760 Datasheet2SK3767 Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3767 FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Vol.

  2SK3760   2SK3760







Part Number 2SK3767
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK3760 Datasheet2SK3767 Datasheet (PDF)

www.DataSheet4U.com 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3767 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain .

  2SK3760   2SK3760







Part Number 2SK3766
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOS Type FET
Datasheet 2SK3760 Datasheet2SK3766 Datasheet (PDF)

2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) www.DataSheet4U.com 2SK3766 Unit: mm Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance: |Yfs| = 0.65 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 3.5~4.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-sourc.

  2SK3760   2SK3760







Part Number 2SK3763
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3760 Datasheet2SK3763 Datasheet (PDF)

www.DataSheet4U.com 2SK3763 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK3763 unit•F‚•‚• Switching Regulator Applications 3.84•} 0 .2 3.84•}0.2 10.5 10.5max max 4.7max 4.7 max 1.3 6.6 max 6.6 max. 1.3 • • • • Low drain-source ON resistance: R DS (ON) = 3.7ƒ¶ (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 ƒÊ A (V DS = 720 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) 13.4 13.4 min min. 3.9 max .

  2SK3760   2SK3760







Part Number 2SK3762
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3760 Datasheet2SK3762 Datasheet (PDF)

www.DataSheet4U.com 2SK3762 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡W ) 2SK3762 unit•F‚•‚• Switching Regulator Applications 3.84•}0.2 3.84•} 0 .2 10.5 10.5 max max 4.7max 4.7 max 1.3 6.6 max 6.6 max. • • • • Low drain-source ON resistance: R DS (ON) = 5.6ƒ¶ (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 ƒÊ A (V DS = 720 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) 1.3 13.4 13.4 min min. 3.9 max .

  2SK3760   2SK3760







N-Channel MOSFET

www.DataSheet4U.com 2SK3760 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y ) 2SK3760 unit•F‚•‚• Switching Regulator Applications 3.84•} 0 .2 3.84•}0.2 10.5 10.5max max 4.7max 4.7 max 1.3 6.6 max 6.6 max. 1.3 • • • • Low drain-source ON resistance: R DS (ON) = 1.7ƒ¶ (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 ƒÊ A (V DS = 600 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) 13.4 13.4min min. 3.9 max 3.9 max. Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage DC Drain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 600 600 ±30 3.5 14 60 6.3 W mJ A mJ °C °C Unit V V V A 15.6 max 15.6 max. 2.7 1.5 1.5 max max 0.81 0.81 max 0.45 0.45 2.7 2.54 2.54 2.7 1 2 3 Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1. 2. 3. Gate Drain(HEAT SINK) Source DataSheet4U.com 6 150 -55~150 3.5 DataShee JEDEC JEITA TOSHIBA TO-220AB SC-46 •\ Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.08 83.3 Unit °C/W °C/W Weight : 2.0g(typ.) 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, .


2006-09-04 : LA4590W    LA4597    DM8831    DM8832    DM8830    93L11    AM93L11    DC1281    DC1253    5962-8551401   


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