DATA SHEET
www.DataSheet4U.com
MOS FIELD EFFECT TRANSISTOR
2SK3811
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The...
DATA SHEET
www.DataSheet4U.com
MOS FIELD EFFECT TRANSISTOR
2SK3811
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3811-ZP PACKAGE TO-263 (MP-25ZP)
FEATURES
Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) High Current Rating: ID(DC) = ±110 A (TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source
Voltage (VGS = 0 V) Gate to Source
Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
40 ±20 ±110 ±440 213 1.5 150 −55 to +150 518 72 518
V V A A W W °C °C mJ A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Energy
Note2 Note3 Note3
EAS IAR EAR
Repetitive Avalanche Current Repetitive Avalanche Energy
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3. RG = 25 Ω, Tch(peak) ≤ 150°C
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D16737EJ1V0DS00 (1st edition) Date Published June 2004 NS CP(K) Printed in Japan
200...