2SK3813

DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3813 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3813 2SK3813-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A) Low C iss: C iss = 5500 pF TYP. (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 40 ±20 ±60 ±240 84 1.0 150 −55 to +150 137 37 137 V V A A W W °C °C mJ A mJ (TO-252) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Energy Note2 Note3 Note3 EAS IAR EAR Repetitive Avalanche Current Repetitive Avalanche Energy Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3. Tch(peak) ≤ 150°C, RG = 25 Ω The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16739EJ2V0DS0...