isc N-Channel MOSFET Transistor
2SK3815L
FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V(M...
isc N-Channel
MOSFET Transistor
2SK3815L
FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source
Voltage
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 55mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
60
V
VGS
Gate-Source
Voltage-Continuous
±20
V
ID
Drain Current-Continuous
23
A
IDM
Drain Current-Single Pluse
92
A
PD
Total Dissipation @TC=25℃
40
W
TJ
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 3.125
UNIT ℃/W
isc website:www.iscsemi.com
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isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown
Voltage
VGS(th) Gate Threshold
Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate
Voltage Drain Current
VSD
Forward On-
Voltage
CONDITIONS VGS= 0; ID= 1.0mA
VDS= 10V; ID= 1.0mA VGS= 10V; ID= 12A VGS= 4.5V; ID= 12A VGS= ±16V;VDS= 0
VDS= 60V; VGS= 0
IS= 23A; VGS= 0
2SK3815L
MIN MAX UNIT
60
--
V
1.2
2.6
V
--
55 85
mΩ
--
±10
uA
--
1.0
uA
--
1.5
V
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