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Ordering number : ENN8055
2SK3817
2SK3817
Features
• • • • •
N-Channel Silicon MOSFET
General-P...
www.DataSheet4U.com
Ordering number : ENN8055
2SK3817
2SK3817
Features
N-Channel Silicon
MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 60 240 1.65 65 150 --55 to +150 135 60 Unit V V A A W W °C °C mJ A
Note : *1 VDD=20V, L=50µH, IAV=60A *2 L≤50µH, single pulse
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=30A ID=30A, VGS=10V ID=30A, VGS=4V Ratings min 60 1 ±10 1.2 24 40 11.5 16 15 22 2.6 typ max Unit V
µA µA
V S mΩ mΩ
Marking : K3817
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support ...