2SK3821
Ordering number : ENN8058
2SK3821
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Fea...
2SK3821
Ordering number : ENN8058
2SK3821
N-Channel Silicon
MOSFET
General-Purpose Switching Device Applications
Features
Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Note : *1 VDD=20V, L=200µH, IAV=40A
*2 L≤200µH, single pulse
Symbol VDSS VGSS
ID IDP
PD
Tch Tstg EAS IAV
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K3821
Symbol
V(BR)DSS IDSS IGSS
VGS(off) yfs
RDS(on)1 RDS(on)2
Conditions
ID=1mA, VGS=0 VDS=100V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=20A ID=20A, VGS=10V ID=20A, VGS=4V
Ratings 100 ±20 40 160 1.65 65 150
--55 to +150 200 40
Unit V V A A W W °C °C mJ A
min 100
1.2 18.5
Ratings typ
max
Unit
V
1 µA
±10 µA
2.6 V
31 S
25 33 mΩ
30 42 mΩ
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© 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number: 2SK3821/D
Continued from preceding page.
Parameter
Input ...