2SK3832

www.DataSheet4U.com Ordering number : ENN8015 2SK3832 2SK3832 Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1. VDD=20V, L=100µH, IAV=30A *2. L≤100µH, 1 Pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 100 ±20 30 120 2.5 65 150 --55 to +150 56 30 Unit V V A A W W °C °C mJ A Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=100V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=15A ID=15A, VGS=10V ID=15A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 100 1 ±10 1.2 12.5 21 46 57 2150 160 110 60 80 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : K3832 Continued on next page. Any and all SANYO products described or con...