DatasheetsPDF.com

2SK3833 Datasheet

Part Number 2SK3833
Manufacturers Sanyo
Logo Sanyo
Description N-Channel Silicon MOSFET
Datasheet 2SK3833 Datasheet2SK3833 Datasheet (PDF)

Ordering number : ENN8016 2SK3833 N-Channel Silicon MOSFET 2SK3833 General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC Converter. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pu.

  2SK3833   2SK3833






Part Number 2SK3836
Manufacturers Sanyo
Logo Sanyo
Description N-Channel Silicon MOSFET
Datasheet 2SK3833 Datasheet2SK3836 Datasheet (PDF)

Ordering number : EN8638 2SK3836 2SK3836 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Ultrahigh-speed switching. • 4V drive. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1 VDD=20V, L=200µH, IAV=.

  2SK3833   2SK3833







Part Number 2SK3835
Manufacturers Sanyo
Logo Sanyo
Description N-Channel Silicon MOSFET
Datasheet 2SK3833 Datasheet2SK3835 Datasheet (PDF)

Ordering number : EN8637 2SK3835 2SK3835 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Ultrahigh-speed switching. • 4V drive. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1 VDD=20V, L=100µH, IAV=.

  2SK3833   2SK3833







Part Number 2SK3834
Manufacturers Sanyo
Logo Sanyo
Description N-Channel Silicon MOSFET
Datasheet 2SK3833 Datasheet2SK3834 Datasheet (PDF)

Ordering number : ENN8017 2SK3834 N-Channel Silicon MOSFET 2SK3834 General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC Converter. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pu.

  2SK3833   2SK3833







Part Number 2SK3832
Manufacturers Sanyo
Logo Sanyo
Description N-Channel Silicon MOSFET
Datasheet 2SK3833 Datasheet2SK3832 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN8015 2SK3832 2SK3832 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avala.

  2SK3833   2SK3833







N-Channel Silicon MOSFET

Ordering number : ENN8016 2SK3833 N-Channel Silicon MOSFET 2SK3833 General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC Converter. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1. VDD=20V, L=100µH, IAV=48A *2. L≤100µH, 1 Pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Tc=25°C Ratings 100 ±20 48 192 2.5 85 150 --55 to +150 144 48 Unit V V A A W W °C °C mJ A Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking : K3833 Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=100V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=24A ID=24A, VGS=10V ID=24A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz min 100 1.2 20 Ratings typ max Unit V 1 µA ±10 µA 2.6 V 33 S 26 34 mΩ 31 43 mΩ 4200 pF 300 pF 250 pF Continued on next page. Any and all SANYO products described or conta.


2016-06-16 : TMPF16N25ZG    TMP16N25ZG    TMPF16N25Z    TMP16N25Z    TMT3N40ZG    TMT3N30G    TMU3N40ZG    TMD3N40ZG    TMU5N40ZG    TMD5N40ZG   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)