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2SK3844 Datasheet

Part Number 2SK3844
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3844 Datasheet2SK3844 Datasheet (PDF)

2SK3844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) 2SK3844 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • • Low drain-source ON resistance: RDS (ON) = 4.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 63 S (typ.) Unit: mm • Low leakage current: IDSS = 100 μA (max)(VDS = 60 V) www.DataSheet4U.com • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Dr.

  2SK3844   2SK3844






Part Number 2SK3847
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3844 Datasheet2SK3847 Datasheet (PDF)

2SK3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOS III) 2SK3847 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 12 mΩ (typ.) : |Yfs| = 36 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 40 V) z Enhancement mode : Vth = 1.5 to 2.5 V www.DataSheet4U.com (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate vol.

  2SK3844   2SK3844







Part Number 2SK3846
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3844 Datasheet2SK3846 Datasheet (PDF)

2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII) 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 12 mΩ (typ.) : |Yfs| = 33 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 40 V) z Enhancement mode : Vth = 1.5~2.5 V (VDS = 10 V, ID = 1 mA) www.DataSheet4U.com Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Drain–gate voltage.

  2SK3844   2SK3844







Part Number 2SK3845
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3844 Datasheet2SK3845 Datasheet (PDF)

2SK3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3845 Switching Regulator, DC-DC Converter Applications and Motor Drive Applications • • • Low drain-source ON resistance: RDS (ON) = 4.7 mΩ (typ.) High forward transfer admittance: |Yfs| = 88 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Unit: mm • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source vo.

  2SK3844   2SK3844







Part Number 2SK3843
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3844 Datasheet2SK3843 Datasheet (PDF)

2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII) 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 2.7 mΩ (typ.) : |Yfs| = 120 S (typ.) Unit: mm z Low leakage current : IDSS = 10 μA (max) (VDS = 40 V) z Enhancement mode : Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA) www.DataSheet4U.com Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Drain–gate voltag.

  2SK3844   2SK3844







N-Channel MOSFET

2SK3844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) 2SK3844 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • • Low drain-source ON resistance: RDS (ON) = 4.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 63 S (typ.) Unit: mm • Low leakage current: IDSS = 100 μA (max)(VDS = 60 V) www.DataSheet4U.com • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 45 180 45 527 45 4.0 150 −55~150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc=25℃) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. re.


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