2SK3847

2SK3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOS III) 2SK3847 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 12 mΩ (typ.) : |Yfs| = 36 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 40 V) z Enhancement mode : Vth = 1.5 to 2.5 V www.DataSheet4U.com (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 40 40 ±20 32 96 30 47 32 3 150 −55~150 Unit V V V A A W mJ A mJ °C °C Drain power dissipation Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-10S1B Weight: 1.5 g (typ.) Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 4.17 83.3 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 48 μH, RG = 25 Ω, IAR = 32 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. JEDEC JEITA TOSHIBA ― ― 2-10S2B Weight: 1.5 g (typ.) 1 2006-09-27 2SK3847 Electrical Characteristic...