2SK3850

Ordering number : ENN8193 2SK3850 2SK3850 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Best suited for motor drive. Low ON-resistance. Low Qg. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking :K3850 Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss ID=1mA, VGS=0 VDS=600V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=0.35A VGS=10V, ID=0.35A VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings Unit 600 V ±30 V 0.7 A 2.8 A 1.0 W 15 W 150 °C --55 to +150 °C min 600 2.5 280 Ratings Unit typ max V 100 µA ±100 nA 3.5 V 560 mS 14 18.5 Ω 96 pF 29 pF 16 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications...