:
SILICON N CHANNEL MOS TYPE for-MOS)
)
2SK387
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
SWITCHING REGULATOR, D...
:
SILICON N CHANNEL MOS TYPE for-MOS)
)
2SK387
HIGH SPEED, HIGH
VOLTAGE SWITCHING APPLICATIONS.
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.
FEATURES
. Low Drain-Source ON Resistance : RdS(ON) = 0- 12 ^ ( tYP
. High Forward Transfer Admittance : 1 Yf s | =6S (Typ.) . Low Leakage Current : lGsS =±100nA (Max « ) @ VgS=±20V
lDSS=lmA(Max.) @ VD s=150V
. Enhancement-Mode
: Vth=1.5~3.5V @ lD=lmA
INDUSTRIAL APPLICATIONS Unit in mm
2Q5MAX. 0'3.3±Q2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Drain-Source
Voltage
Gate-Source
Voltage
Drain Current
DC Pulse
Drain Power Dissipation
(Tc=25°C)
SYMBOL VDSX VGSS ID idp
RATING 150 ±20 12 40 150
UNIT
5.45±ai5
545±Q15
mo
dd
< 5
m+ 1 to d
00 OS
V_
f\
1. QATE
2. DRAIN (HEAT SINK)
3. SOURCE
Channel Temperature Storage Temperature Range
Tch T stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
150
-55-150
°C °C
EIAJ TOSHIBA Weight : 9.7g
2-21F1B
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. M...
