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2SK387 Transistor Datasheet PDF

N-Channel MOSFET Transistor

N-Channel MOSFET Transistor

 

 

 

Part Number 2SK387
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor DESCRIP TION ·Drain Current –ID=12A@ TC=25 ·Drain Source Voltage- : VDSS= 150V( Min) ·Fast Switching Speed ·100% aval anche tested ·Minimum Lot-to-Lot varia tions for robust device performance and reliable operation APPLICATIONS ·Hig h speed applications.
such as off-line switching power supplies , UPS,AC and D C motor controls,relay and solenoid dri vers.
ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL ARAMETER VALUE UNIT VDSS D rain-Source Voltage (VGS=0) 150 V VG S Gate-Source Voltage ±20 V ID Dr ain Current-continuous@ TC=25℃ 12 A Ptot Total Dissipation@TC= .
Manufacture Inchange Semiconductor
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2SK387

 

 

 


 

 

 

Part Number 2SK387
Description N-Channel Transistor
Feature : SILICON N CHANNEL MOS TYPE for-MOS) ) 2SK387 HIGH SPEED, HIGH VOLTAGE SWITC HING APPLICATIONS.
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLIC ATIONS.
FEATURES .
Low Drain-Source O N Resistance : RdS(ON) = 0- 12 ^ ( tYP
• .
High Forward Transfer Admittance : 1 Yf s | =6S (Typ.
) .
Low Leakage Cu rrent : lGsS =±100nA (Max « ) @ VgS= 20V lDSS=lmA(Max.
) @ VD s=150V .
Enh ancement-Mode : Vth=1.
5~3.
5V @ lD=lmA INDUSTRIAL APPLICATIONS Unit in mm 2Q5 MAX.
0'3.
3±Q2 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Drain-Source Voltag e Gate-Source Voltage Drain Current DC Pulse Drain Power .
Manufacture Toshiba
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2SK387

 

 

 

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