2SK3872-01SJ

2SK3872-01L,S,SJ N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Outline Drawings (mm) 200406 Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Equivalent circuit schematic Item Drain-source voltage Symbol VDS Ratings 230 Unit V Remarks Drain(D) VDSX 230 V VGS=-30V Continuous Drain Current ID 40 A Pulsed Drain Current ID(puls] ±160 A Gate-Source Voltage VGS ±30 V Gate(G) Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg 40 633.1 A Note *1 mJ Note *2 27 mJ Note *3 20 5 270 2.02 +150 -55 to +150 kV/µs VDS=< 230V kV/µs Note *4 W Tc=25°C Ta=25°C °C °C Source(S) Note *1:Tch<= 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=16A,L=4.09mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. Electrical characteristics (Tc =25°C unless otherwise specified) Note *4:IF<= -ID, -di/dt...