isc N-Channel MOSFET Transistor
2SK3879
FEATURES ·Drain Current : ID= 6.5A@ TC=25℃ ·Drain Source Voltage
: VDSS= 800V(...
isc N-Channel
MOSFET Transistor
2SK3879
FEATURES ·Drain Current : ID= 6.5A@ TC=25℃ ·Drain Source
Voltage
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
800
V
VGS
Gate-Source
Voltage-Continuous
±30
V
ID
Drain Current-Continuous
6.5
A
IDM
Drain Current-Single Pluse
19.5
A
PD
Total Dissipation @TC=25℃
80
W
TJ
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 1.56
UNIT ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown
Voltage
VGS(th) Gate Threshold
Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate
Voltage Drain Current
VSD
Forward On-
Voltage
CONDITIONS VGS= 0; ID= 0.25mA VDS= 10V; ID= 1mA VGS= 10V; ID= 3.5A VGS= ±25V;VDS= 0 VDS= 640V; VGS= 0 IS= 6.5A; VGS= 0
2SK3879
MIN MAX UNIT
800
--
V
2.0
4.0
V
--
1.7
Ω
--
±10
uA
--
100
uA
--
1.7
V
NOTICE： ISC reserves the rights to make changes of the cont...
