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2SK3880 Datasheet

Part Number 2SK3880
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3880 Datasheet2SK3880 Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3880 FEATURES ·Drain Current : ID= 6.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Contin.

  2SK3880   2SK3880






Part Number 2SK3880
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-Channel MOSFET
Datasheet 2SK3880 Datasheet2SK3880 Datasheet (PDF)

2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK3880 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100μA (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Puls.

  2SK3880   2SK3880







N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor 2SK3880 FEATURES ·Drain Current : ID= 6.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6.5 A IDM Drain Current-Single Pluse 19.5 A PD Total Dissipation @TC=25℃ 80 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.56 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 0.25mA VDS= 10V; ID= 1mA VGS= 10V; ID= 3.5A VGS= ±25V;VDS= 0 VDS= 640V; VGS= 0 IS= 6.5A; VGS= 0 2SK3880 MIN MAX UNIT 800 -- V 2.0 4.0 V -- 1.7 Ω -- ±10 uA -- 100 uA -- 1.7 V NOTICE: ISC reserves the rights to make changes of the cont.


2022-05-29 : 2SK3435-S    2SK3435    2SK3479-ZJ    2SK3479-Z    2SK3468    2SK3479    2SK3479-S    2SK3450    2SK3437K    2SK3437B   


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