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2SK3905 Transistor Datasheet PDFN-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part Number | 2SK3905 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3905
FEATURES ·Drain Current : ID= 17A@ T C=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Resi stance
: RDS(on) = 0. 31Ω(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot- to-Lot variations for robust device per formance and reliable operation DESCRI PTION ·motor drive, DC-DC converter, p ower switch and solenoid drive. ABSOLU TE MAXIMUM RATINGS(Ta=25℃) SYMBOL P ARAMETER VALUE UNIT VDSS Drain-Sour ce Voltage 500 V VGS Gate-Source Vo ltage-Continuous ±30 V ID Drain Cu rrent-Continuous 17 A IDM Drain Cur rent-Single Pluse 68 A . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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| Part Number | 2SK3905 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | www. DataSheet4U. com 2SK3905 TOSHIBA Fi eld Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3905 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (O N) = 0. 25 Ω (typ. ) High forward transf er admittance: ⎪Yfs⎪ = 8. 2 S (typ. ) Low leakage current: IDSS = 100 μA (m ax) (VDS = 500 V) Enhancement model: Vt h = 2. 0~4. 0 V (VDS = 10 V, ID = 1 mA) U nit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source vol tage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pu lse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
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