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2SK3905 Datasheet

www.DataSheet4U.com 2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3905 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) Enhancement mo.

Toshiba Semiconductor
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Toshiba Semiconductor 2SK3905 Datasheet
www.DataSheet4U.com 2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3905 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 17 68 150 816 17 15 150 −55~150 Unit V V V A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-65 2−16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. .






isc N-Channel MOSFET Transistor 2SK3905 FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.31Ω(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC.

Inchange Semiconductor
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Inchange Semiconductor 2SK3905 Datasheet
isc N-Channel MOSFET Transistor 2SK3905 FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.31Ω(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 17 A IDM Drain Current-Single Pluse 68 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.833 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID= 1mA VGS= 10V; ID= 9.5A VGS= ±25V;VDS= 0 VDS= 500V; VGS= 0 IS= 17A; VGS= 0 2SK3905 MIN MAX UNIT 500 -- V 2.0 4.0 V -- 0.31 Ω -- ±10 uA -- 100 uA -- 1.7 V NOTICE: ISC reserves the rights to make changes of th.






N-Channel MOSFET

www.DataSheet4U.com 2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3905 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 17 68 150 816 17 15 150 −55~150 Unit V V V A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-65 2−16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. .


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