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2SK3916-01 Datasheet

Part Number 2SK3916-01
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK3916-01 Datasheet2SK3916-01 Datasheet (PDF)

2SK3916-01 FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] TO-220AB Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage Continuous drain current Puls.

  2SK3916-01   2SK3916-01






Part Number 2SK3916-01
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3916-01 Datasheet2SK3916-01 Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3916-01 FEATURES ·Drain Current : ID= 4.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 450 V VGS Gate-Source Vo.

  2SK3916-01   2SK3916-01







N-CHANNEL SILICON POWER MOSFET

2SK3916-01 FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] TO-220AB Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive VDS VDSX ID ID(puls] VGS IAR 450 450 4.3 ±17.2 ±30 4.3 V V VGS=-30V A A V A Note *1 Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation Operating and storage EAS dVDS/dt dV/dt PD Tch 211 6 20 5 2.02 60 +150 mJ Note *2 mJ Note *3 kV/μs VDS <=450V kV/μs Note *4 W Ta=25°C W Tc=25°C °C temperature range Tstg -55 to +150 °C Note *1 Tch<=150°C Note *2 Starting Tch=25°C, IAS=1.8A, L=119mH, VCC=45V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF=< -ID, -di/dt=50A/μs, Vcc<= BVDSS, Tch =<150°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-.


2022-06-05 : 2SK3887-01    2SK3886-01MR    2SK3882-01    AM26S10C    AM1810    AM1806    AM1808    AM1705    2SK3914-01    2SK3911   


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