2SK3921-01L

2SK3921-01L,S,SJ FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive VDS VDSX ID ID(puls] VGS IAR 120 90 67 ±268 ±30 67 V V VGS=-30V A A V A Note *1 Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation Operating and storage EAS dVDS/dt dV/dt PD Tch 719.1 27.0 20 5 2.02 270 +150 mJ Note *2 mJ Note *3 kV/μs VDS <=120V kV/μs Note *4 W Ta=25°C W Tc=25°C °C temperature range Tstg -55 to +150 °C Note *1 Tch<=150°C Note *2 Starting Tch=25°C, IAS=27A, L=1.32mH, VCC=48V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF=< -ID, -di/dt=50A/μs, Vcc<= BVDSS, Tch =<150°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) It...