DatasheetsPDF.com

2SK3924-01L Datasheet

N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor 2SK3924-01L FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 180mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, powe.


Inchange Semiconductor
2SK3924-01L.pdf

Preview
Preview

Preview

Inchange Semiconductor 2SK3924-01L Datasheet

isc N-Channel MOSFET Transistor 2SK3924-01L FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 180mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 14 A IDM Drain Current-Single Pluse 56 A PD Total Dissipation @TC=25℃ 105 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.191 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise s.






2SK3924-01L,S,SJ N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings (mm) 200406 See to P4 Maximum ratings and chara.


Fuji Electric
2SK3924-01L.pdf

Preview
Preview


Preview

Fuji Electric 2SK3924-01L Datasheet

2SK3924-01L,S,SJ N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings (mm) 200406 See to P4 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 250 V Equivalent circuit schematic Drain(D) VDSX 220 V VGS=-30V Continuous Drain Current ID 14 A Pulsed Drain Current ID(puls] ±56 A Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Max. Power Dissipation Operating and Storage Temperature range VGS IAR EAS EAR dVDS/dt dV/dt -di/dt PD Tch Tstg ±30 14 301.1 V A Note *1 mJ Note *2 10.5 mJ Not.








 

@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)