2SK3930-01L,S,SJ
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching No...
2SK3930-01L,S,SJ
N-CHANNEL SILICON POWER
MOSFET
FUJI POWER
MOSFET
Super FAP-G Series
Features
High speed switching No secondary breakdown Avalanche-proof
Low on-resistance Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Outline Drawings (mm) 200406 See to P4
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Symbol
Ratings Unit Remarks
Drain-source
voltage
VDS
600
V
Equivalent circuit schematic
Drain(D)
VDSX
600
V
VGS=-30V
Continuous Drain Current
ID
11
A
Pulsed Drain Current
ID(puls]
±44
A
Gate-Source
Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Max. Power Dissipation
Operating and Storage Temperature range
VGS IAR EAS
EAR
dVDS/dt dV/dt -di/dt PD
Tch Tstg
±30 11
439.1
V A Note *1 mJ Note *2
19.5
mJ Note *3
20 5
100 195
1.67 +150 -55 to +150
kV/µs VDS=< 600V kV/µs Note *4 A/µs Note *5 W Tc=25°C
Ta=25°C
°C °C
Electrical characteristics (Tc =25°C unless otherwise specified)
Gate(G)
Source(S)
Note *1:Tch =< 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=5A,L=32.2mH,
VCC=60V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Trans...
