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2SK3940 Datasheet

Part Number 2SK3940
Manufacturers Toshiba
Logo Toshiba
Description N-Channel MOSFET
Datasheet 2SK3940 Datasheet2SK3940 Datasheet (PDF)

2SK3940 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3940 Switching Regulator, DC/DC Converter Applications Motor Drive Applications • • • • Low drain-source ON-resistance: RDS (ON) = 5.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 90 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 75 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 2.

  2SK3940   2SK3940






Part Number 2SK3940
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3940 Datasheet2SK3940 Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3940 FEATURES ·Drain Current : ID= 70A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.0mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage.

  2SK3940   2SK3940







N-Channel MOSFET

2SK3940 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3940 Switching Regulator, DC/DC Converter Applications Motor Drive Applications • • • • Low drain-source ON-resistance: RDS (ON) = 5.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 90 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 75 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 75 75 ±20 70 280 150 444 70 15 175 −55~175 Unit V V V A W 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC mJ A mJ °C °C ― ― 2-16C1B JEITA TOSHIBA Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability.


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