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2SK3947 Transistor Datasheet PDF

N-Channel MOSFET Transistor

N-Channel MOSFET Transistor

 

 

 

Part Number 2SK3947
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3947 FEATURES ·Drain Current : ID= 6.
0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Res istance : RDS(on) = 1.
4Ω(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot- to-Lot variations for robust device per formance and reliable operation DESCRI PTION ·motor drive, DC-DC converter, p ower switch and solenoid drive.
ABSOLU TE MAXIMUM RATINGS(Ta=25℃) SYMBOL P ARAMETER VALUE UNIT VDSS Drain-Sour ce Voltage 600 V VGS Gate-Source Vo ltage-Continuous ±30 V ID Drain Cu rrent-Continuous 6.
0 A IDM Drain Cu rrent-Single Pluse 24 A .
Manufacture Inchange Semiconductor
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2SK3947

 

 

 


 

 

 

Part Number 2SK3947
Description Silicon N-Channel MOSFET
Feature 2SK3947 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2 SK3947 Switching Regulator Application s
• Low drain-source ON-resistance: R DS (ON) = 1.
1 Ω (typ.
)
• High forwar d transfer admittance: |Yfs| = 5.
0S (ty p.
)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 m A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol R ating Unit Drain-source voltage Drai n-gate voltage (RGS = 20 kΩ) Gate-sour ce voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Si .
Manufacture Toshiba
Datasheet
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2SK3947

 

 

 

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