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2SK3947 Transistor Datasheet PDFN-Channel MOSFET Transistor N-Channel MOSFET Transistor |
Part Number | 2SK3947 |
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Description | N-Channel MOSFET Transistor |
Feature | isc N-Channel MOSFET Transistor
2SK3947
FEATURES ·Drain Current : ID= 6. 0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Res istance : RDS(on) = 1. 4Ω(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot- to-Lot variations for robust device per formance and reliable operation DESCRI PTION ·motor drive, DC-DC converter, p ower switch and solenoid drive. ABSOLU TE MAXIMUM RATINGS(Ta=25℃) SYMBOL P ARAMETER VALUE UNIT VDSS Drain-Sour ce Voltage 600 V VGS Gate-Source Vo ltage-Continuous ±30 V ID Drain Cu rrent-Continuous 6. 0 A IDM Drain Cu rrent-Single Pluse 24 A . |
Manufacture | Inchange Semiconductor |
Datasheet |
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Part Number | 2SK3947 |
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Description | Silicon N-Channel MOSFET |
Feature | 2SK3947
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2 SK3947
Switching Regulator Application s
• Low drain-source ON-resistance: R DS (ON) = 1. 1 Ω (typ. ) • High forwar d transfer admittance: |Yfs| = 5. 0S (ty p. ) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode : Vth = 2. 0~4. 0 V (VDS = 10 V, ID = 1 m A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol R ating Unit Drain-source voltage Drai n-gate voltage (RGS = 20 kΩ) Gate-sour ce voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Si . |
Manufacture | Toshiba |
Datasheet |
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