DatasheetsPDF.com

2SK3980 Datasheet

Part Number 2SK3980
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet 2SK3980 Datasheet2SK3980 Datasheet (PDF)

Ordering number : EN8641 www.DataSheet4U.com 2SK3980 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3980 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤.

  2SK3980   2SK3980






Part Number 2SK3988-01
Manufacturers Fuji
Logo Fuji
Description N-Channel Silicon MOSFET
Datasheet 2SK3980 Datasheet2SK3988-01 Datasheet (PDF)

2SK3988-01 www.DataSheet4U.com FUJI POWER MOSFET 200511 Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current.

  2SK3980   2SK3980







Part Number 2SK3987-01SJ
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK3980 Datasheet2SK3987-01SJ Datasheet (PDF)

2SK3987-01L,S,SJ FUJI POWER MOSFET Super FAP-G Series 200511 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 500 V VDSX 50.

  2SK3980   2SK3980







Part Number 2SK3987-01S
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK3980 Datasheet2SK3987-01S Datasheet (PDF)

2SK3987-01L,S,SJ FUJI POWER MOSFET Super FAP-G Series 200511 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 500 V VDSX 50.

  2SK3980   2SK3980







Part Number 2SK3987-01L
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK3980 Datasheet2SK3987-01L Datasheet (PDF)

2SK3987-01L,S,SJ FUJI POWER MOSFET Super FAP-G Series 200511 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 500 V VDSX 50.

  2SK3980   2SK3980







Part Number 2SK3984
Manufacturers NEC
Logo NEC
Description N-Channel Power MOSFET
Datasheet 2SK3980 Datasheet2SK3984 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3984 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3984 is N-channel MOS Field Effect Transistor designed for high speed switching applications such as class-D amplifier. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3984-ZK TO-252 (MP-3ZK) FEATURES • Super low on-state resistance RDS(on) = 71 mΩ TYP. (VGS = 10 V, ID = 9 A) RDS(on) = 85 mΩ MAX. (VGS = 10 V, ID = 9 A) • Low Ciss: Ciss = 750 pF TYP. (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C.

  2SK3980   2SK3980







N-Channel Silicon MOSFET

Ordering number : EN8641 www.DataSheet4U.com 2SK3980 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3980 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C Conditions Ratings 60 ±10 0.9 3.6 0.9 3.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=0.5A ID=0.5A, VGS=4V ID=0.3A, VGS=2.5V ID=0.1A, VGS=1.8V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 60 1 ±10 0.4 0.9 1.5 635 705 850 100 9.5 6.7 8.8 10.5 21.5 15.8 830 990 .


2009-08-05 : CHB50    CHB50W    MAX2078    CD8550    2SK3980    2SK3988-01    BS18B20    LM238XB    C5122    CMX605   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)