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2SK3981-01 MOSFET Datasheet PDFN-CHANNEL SILICON POWER MOSFET N-CHANNEL SILICON POWER MOSFET |
| Part Number | 2SK3981-01 |
|---|---|
| Description | N-CHANNEL SILICON POWER MOSFET |
| Feature | 2SK3981-01 FUJI POWER MOSFET
Super FAP- G Series
200511
N-CHANNEL SILICON POWE R MOSFET
Features High speed switching No secondary breadown Avalanche-proof
Low on-resistance Low driving power Hi gh voltage
Applications
Switching reg ulators
DC-DC converters
UPS (Uninter ruptible Power Supply)
Outline Drawing s [mm]
TO-220AB
Maximum ratings and ch aracteristicAbsolute maximum ratings
(T c=25°C unless otherwise specified)
It em
Symbol
Ratings Unit Remarks
Drain -source voltage
VDS
900
V
VDSX
900
V VGS=-30V
Continuous drain current
ID
2. 6 A Pulsed drain current ID(p uls] ±10. 4 A . |
| Manufacture | Fuji Electric |
| Datasheet |
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| Part Number | 2SK3981-01 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3981 -01
FEATURES ·Drain Current : ID= 2. 6 A@ TC=25℃ ·Drain Source Voltage : VD SS= 900V(Min) ·Static Drain-Source On- Resistance : RDS(on) = 6. 4Ω(Max) @VGS= 10V ·100% avalanche tested ·Minimum L ot-to-Lot variations for robust device performance and reliable operation DES CRIPTION ·motor drive, DC-DC converter , power switch and solenoid drive. ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-S ource Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2. 6 A IDM Drain Current-Single Pluse 10. . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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