2SK3982-01MR

2SK3982-01MR FUJI POWER MOSFET Super FAP-G Series 200511 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power High voltage Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] TO-220F Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 900 V VDSX 900 V VGS=-30V Continuous drain current ID 2.6 A Pulsed drain current ID(puls] ±10.4 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR 2.6 A Note *1 Non-repetitive Maximum avalanche energy EAS 349.1 mJ Note *2 Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt EAR dVDS/dt dV/dt 3.2 40 5 mJ Note *3 kV/µs VDS <=900V kV/µs Note *4 Maximum power dissipation PD Operating and storage Tch 32 W 2.16 W +150 °C Tc=25°C Ta=25°C temperature range Tstg -55 to +150 °C Note *1 Tch<=150°C Note *2 Starting Tch=25°C, IAS=1.1A, L=524mH, VCC=100V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF=< -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch =<150°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteri...