2SK3987-01L,S,SJ FUJI POWER MOSFET
Super FAP-G Series
200511
N-CHANNEL SILICON POWER MOSFET
Features High speed switc...
2SK3987-01L,S,SJ FUJI POWER
MOSFET
Super FAP-G Series
200511
N-CHANNEL SILICON POWER
MOSFET
Features High speed switching No secondary breadown Avalanche-proof
Low on-resistance Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Outline Drawings [mm]
See to P4
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings Unit Remarks
Drain-source
voltage
VDS
500
V
VDSX
500
V VGS=-30V
Continuous drain current
ID
3.6
A
Pulsed drain current
ID(puls]
±14.4
A
Gate-source
voltage
VGS
±30
V
Repetitive or non-repetitive
IAR
3.6
A Note *1
Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation
Operating and storage
EAS
EAR dVDS/dt dV/dt PD
Tch
227.9
6.0 20
5 60
2.02 +150
mJ Note *2
mJ Note *3 kV/μs VDS <=500V kV/μs Note *4 W Tc=25°C W Ta=25°C °C
temperature range
Tstg
-55 to +150 °C
Note *1 Tch<=150°C Note *2 Starting Tch=25°C, IAS=1.5A, L=186mH, VCC=50V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF=< -ID, -di/dt=50A/μs, Vcc<= BVDSS, Tch =<150°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless...