2SK4003

2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4003 Chopper Regulator, DC/DC Converter and Motor Drive Applications ６．５±０．２ Unit: mm １．５±０．２ z Low drain−source ON-resistance z Low leakage current z Enhancement mode : RDS (ON) = 1.7 Ω (typ.) ５．２±０．２ ０．６ MAX． : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) １．６ ５．５±０．２ : IDSS = 100 μA (max) (VDS = 600 V) ０．９ ４．１±０．２ １．１±０．２ ５．７ ０．６ MAX Absolute Maximum Ratings (Ta = 25°C) ２．３ ２．３ Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC Drain current Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 3 12 20 168 3 2 150 −55~150 Unit １ ２ ３ V V V ０．８ MAX． １．1 MAX． ０．６±０．１５ ０．６±０．１５ A A W mJ A mJ °C °C ２．３±０．２ Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate www.DataSheet4U.com reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handli...