| Part Number | 2SK4021 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | N-Channel MOSFET |
| Description | www..com 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4021 Switching Regulators and DC-DC Convert... |
| Features |
te 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
2.3 ± 0.2
5.7
3
JEDEC JEITA TOSHIBA
⎯ ⎯ 2-7J2B
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperatur... |
| Datasheet | 2SK4021 pdf datasheet |
| Part Number | 2SK4028 |
| Manufacturer | NEC |
| Title | N-Channel MOSFET |
| Description | The 2SK4028 is suitable for converter of ECM. PACKAGE DRAWING (Unit: mm) 1.2 ±0.1 0.3 –0.05 +0.1 MAX. 0.33 FEATURES • High gain 1.2 ±0.1 • Low. |
| Features |
• High gain 1.2 ±0.1 • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Ultra thin thickness package t = 0.3 mm TYP. 0.8 ±0.1 −1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) 3 0 to 0.02 2 1 0.4 0.4 0.13 –0.05 +0.1 ORDERING INFORMATION PART NUMBER 2SK4028 PACKAGE 3pXSOF03 (0812) 0.2. |
| Datasheet | 2SK4028 pdf datasheet |
| Part Number | 2SK4027 |
| Manufacturer | NEC |
| Title | N-Channel MOSFET |
| Description | The 2SK4027 is suitable for converter of ECM. PACKAGE DRAWING (Unit: mm) 0.4 +0.1 –0.05 0.16 –0.06 +0.1 • High gain −1.0 dB (VDD = 2.0 V, C = 5 . |
| Features |
Marking
3
1.5
2
2.0 MIN.
1
ORDERING INFORMATION
PART NUMBER 2SK4027 PACKAGE SC-59 (Straight)
0.95
0.95
0.8 ±0.1 1.1 +0.2 –0.1 1.9 ±0.2 2.9 ±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = −1.0 V) Gate to Drain Voltage Drain Current Gate Current Total Power Dissipati. |
| Datasheet | 2SK4027 pdf datasheet |
| Part Number | 2SK4026 |
| Manufacturer | Toshiba Semiconductor |
| Title | N-Channel MOSFET |
| Description | www..com 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V) 2SK4026 Switching Regulator Applications ６．５±０. |
| Features |
• • • • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) ０．９ １．６ ５．５±０．２ １．１±０．２ ４．１±０．２ ５．７ ０．６ MAX ２．３ ２．３ ２．３±. |
| Datasheet | 2SK4026 pdf datasheet |
| Part Number | 2SK4023 |
| Manufacturer | Toshiba Semiconductor |
| Title | N-Channel MOSFET |
| Description | www..com 2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4023 Switching Regulator, DC/DC Converter ６. |
| Features |
avalanche energy (Note 3) Channel temperature Storage temperature range
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability. |
| Datasheet | 2SK4023 pdf datasheet |
| Part Number | 2SK4022 |
| Manufacturer | Toshiba Semiconductor |
| Title | N-Channel MOSFET |
| Description | www..com 2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4022 Switching Regulator, DC/DC Converter a. |
| Features |
e current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decreas. |
| Datasheet | 2SK4022 pdf datasheet |
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