2SK4058

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 24 A) Low QGD: QGD = 6.5 nC TYP. 4.5 V drive available ORDERING INFORMATION PART NUMBER 2SK4058(1)-S27-AY Note 2SK4058-ZK-E1-AY Note 2SK4058-ZK-E2-AY Note PACKAGE TO-251 (MP-3-b) TO-252 (MP-3ZK) TO-252 (MP-3ZK) Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 25 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±48 ±144 Total Power Dissipation (TC = 25°C) PT1 29 Total Power Dissipation PT2 1.0 Channel Temperature Tch 150 Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg −55 to +150 IAS 22 EAS 48.4 V V A A W W °C °C A mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 12 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH (TO-251) (TO-252) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country....