2SK4078

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4078 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4078-ZK-E1-AY 2SK4078-ZK-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel PACKAGE TO-252 (MP-3ZK) typ. 0.27 g Note Pb-free (This product does not contain Pb in external electrode.) FEATURES Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 13 A) Low input capacitance Ciss = 2300 pF TYP. Logic level drive type (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 40 ±20 ±50 ±150 45 1.0 150 −55 to +150 23 52 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 2.77 125 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that ...