2SK4082

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4082 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES Low on-state resistance RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 1.8 A) Low gate charge QG = 13 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 3.5 A) Gate voltage rating: ±30 V Avalanche capability ratings (Isolated TO-220) ORDERING INFORMATION PART NUMBER 2SK4082-S17-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube PACKAGE Isolated TO-220 (MP-45F) typ. 2.2 g Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 ±30 ±3.5 ±14 35 2.0 150 −55 to +150 2 240 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all pro...