Ordering number : ENA1366
2SK4101FS
SANYO Semiconductors
DATA SHEET
2SK4101FS
Features
• • • •
N-Channel Silicon MO...
Ordering number : ENA1366
2SK4101FS
SANYO Semiconductors
DATA SHEET
2SK4101FS
Features
N-Channel Silicon
MOSFET
General-Purpose Switching Device Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *4 Avalanche Current *5 Symbol VDSS VGSS IDc *1 IDpack *2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Conditions Ratings 650 ±30 7 6.4 28 2.0 35 150 --55 to +150 194 6 Unit V V A A A W W °C °C mJ A
Note : *1 Shows chip capability. *2 Package limited. *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=6A *5 L≤10mH, Single pulse Marking : K4101
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communicat...