isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=100A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Static...
isc N-Channel
MOSFET Transistor
FEATURES ·Drain Current –ID=100A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.8mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage
60
V
VGS
Gate-Source
Voltage-Continuous
±20
V
ID
Drain Current-Continuous
100
A
IDM
Drain Current-Single Pluse
200
A
PD
Total Dissipation @TC=25℃
132
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.13 ℃/W
2SK4161D
isc website:www.iscsemi.com
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isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 0.1mA
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 35A
IGSS
Gate-Body Leakage Current
VGS= ±15V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS=40V; VGS= 0
VSD
Forward On-
Voltage
IS=50A; VGS= 0
2SK4161D
MIN MAX UNIT
60
V
3.25 3.95
V
4.8
mΩ
±10
uA
100
μA
1.2
V
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