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2SK420 MOSFET Datasheet PDF

Silicon N-Channel MOSFET

Silicon N-Channel MOSFET

 

 

 

Part Number 2SK420
Description Silicon N-Channel MOSFET
Feature : SILICON N CHANNEL MPS TYPE (7T-MOS) i HIGH SPEED, HIGH VOLTAGE SWITCHING AP PLICATIONS.
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS .
FEATURES .
High Breakdown Voltage : V(br)dss= 400V .
High Forward Transfer Admittance : lYf s l=2.
5S (Typ.
) .
Low Leakage Current : LGSS=i100nA(Max.
) @ Vgs=±20V .
Enhancement -Mode IDS S= 1mA (Max.
) @ VdS=400V : Vth= l- 5~ 3.
5V @ lD=lmA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc=25 C) SYMBOL VDSX vgss ID Idp pd RATING 400 ±20 UNIT 6 .
Manufacture Sanyo
Datasheet
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2SK420

 

 

 


 

 

 

Part Number 2SK4209
Description N-Channel Silicon MOSFET
Feature Ordering number : ENA1516 2SK4209 SANY O Semiconductors DATA SHEET 2SK4209 F eatures


• N-Channel Silicon MOSFET General-Purpose Switching Devic e Applications Low ON-resistance, ultr ahigh-speed switching.
Adoption of high reliability HVP process.
Avalanche res istance guarantee.
Specifications Abs olute Maximum Ratings at Ta=25°C Param eter Drain-to-Source Voltage Gate-to-So urce Voltage Drain Current (DC) Drain C urrent (Pulse) Allowable Power Dissipat ion Channel Temperature Storage Tempera ture Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS .
Manufacture Sanyo Semicon Device
Datasheet
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Part Number 2SK4208
Description Silicon N-Channel MOSFET
Feature Plehtatsp:e/M/vaiiwsniwttefw.
nolsalenocm wiie/cnpolDgdiina.
ssUncpceRoaodLnnnttia pidalinmsnbasuaouiocneneniuoetdtdcnd.
ie ltticnnaytnmocalp.
eujaniuesepctn/ddtiee etentsnfyn/yfopaproelnelmdcoaetwitioynn pg.
efourDisMcaionnttieProductnnulifecyc leaenstage.
dce/ Power MOS FETs This p roduct complies with the RoHS Directive (EU 2002/95/EC).
2SK4208 Silicon N-ch annel enhancement MOS FET For high spe ed switching circuits  Features  Gate-source surrender voltage VGSS : 30 V guaranteed  Avalanche energy c apability guaranteed: EAS > 801 mJ  High-speed switching: tf = 88 ns (typ.
)  Absolute Maximum Ra .
Manufacture Panasonic
Datasheet
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