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2SK557 Datasheet

Part Number 2SK557
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK557 Datasheet2SK557 Datasheet (PDF)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Sou.

  2SK557   2SK557






Part Number 2SK557
Manufacturers Renesas
Logo Renesas
Description Silicon N-Channel MOSFET
Datasheet 2SK557 Datasheet2SK557 Datasheet (PDF)

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  2SK557   2SK557







N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 12 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS -55~150 ℃ SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W 2SK557 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS= 10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=6A VSD Diode Forward Voltage IF= 12A; VGS=0 IGSS Gate Source Leakage Current VGS= ±16V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 2SK557 MIN TYP. MAX UNIT 500 V 2.0 4.0 V 0.45 0.60 Ω 1.0 V ±10 uA 250 uA NOTICE: ISC reserves the rights to make changes of the content h.


2016-06-25 : 2SK1944    2SK1942    2SK1941    2SK1940    2SK1939    2SK1938    2SK1937    2SK1936    2SK1917    PE71S6231   


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