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2SK786 Datasheet

Part Number 2SK786
Manufacturers NEC Electronics
Logo NEC Electronics
Description N-Channel MOSFET
Datasheet 2SK786 Datasheet2SK786 Datasheet (PDF)

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  2SK786   2SK786






Part Number 2SK789
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet 2SK786 Datasheet2SK789 Datasheet (PDF)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500.

  2SK786   2SK786







Part Number 2SK789
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK786 Datasheet2SK789 Datasheet (PDF)

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  2SK786   2SK786







Part Number 2SK788
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK786 Datasheet2SK788 Datasheet (PDF)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500.

  2SK786   2SK786







Part Number 2SK788
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description MOSFET
Datasheet 2SK786 Datasheet2SK788 Datasheet (PDF)

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  2SK786   2SK786







Part Number 2SK787
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet 2SK786 Datasheet2SK787 Datasheet (PDF)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching power supplies,actuater control,and pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±20 V ID Drain Current-continu.

  2SK786   2SK786







N-Channel MOSFET

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