DatasheetsPDF.com

2SK957 Datasheet

Part Number 2SK957
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK957 Datasheet2SK957 Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK957-MR FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source V.

  2SK957   2SK957






Part Number 2SK957
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK957 Datasheet2SK957 Datasheet (PDF)

.

  2SK957   2SK957







N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor 2SK957-MR FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.0 A IDM Drain Current-Single Pluse 6.0 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 3.125 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 1.0mA VDS= 10V; ID= 1.0mA VGS= 10V; ID= 1.0A VGS= ±30V;VDS= 0 VDS= 900V; VGS= 0 IS= 2.0A; VGS= 0 2SK957-MR MIN MAX UNIT 900 -- V 2.5 5.0 V -- 8.5 Ω -- ±0.1 uA -- 500 uA -- 1.46 V NOTICE: ISC reserves the rights to make c.


2022-07-30 : 2SK3675-01    2SK3674-01SJ    2SK3674-01S    2SK3674-01L    2SK3673-01MR    2SK3659    2SK3651-01R    2SK3650-01SJ    2SK3650-01S    2SK3650-01L   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)