2ST5949
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = 250 V
■ Complementary to 2ST2121
■ Typical ft = 25 MHz
t(s) ■ Fully characterized at 125 oC uc Application rod ■ Audio power amplifier te P Description le The device is a NPN transistor manufactured o using new BiT-LA (Bipolar transistor for linear s amplifier) technology. The resulting transistor b shows good gain linearity behaviour.
1 2
TO-3
Figure 1. Internal schematic diagram
Obsolete P.
NPN Transistor
2ST5949
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = 250 V
■ Complementary to 2ST2121
■ Typical ft = 25 MHz
t(s) ■ Fully characterized at 125 oC uc Application rod ■ Audio power amplifier te P Description le The device is a NPN transistor manufactured o using new BiT-LA (Bipolar transistor for linear s amplifier) technology. The resulting transistor b shows good gain linearity behaviour.
1 2
TO-3
Figure 1. Internal schematic diagram
Obsolete Product(s) - O Table 1. Device summary
Order code
Marking
Package
Packaging
2ST5949
2ST5949
TO-3
tray
November 2008
Rev 4
1/8
www.st.com
8
Absolute maximum ratings
1
Absolute maximum ratings
2ST5949
Table 2. Absolute maximum rating
Symbol
Parameter
Value
Unit
VCBO Collector-base voltage (IE = 0)
250
V
VCEO Collector-emitter voltage (IB = 0)
250
V
VEBO Emitter-base voltage (IC = 0)
6
V
IC
Collector current
17
A
ICM Collector peak current (tP < 5 ms)
34
A
PTOT
t(s) Tstg
TJ
Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature
duc Table 3. Thermal data
ro Symbol
Parameter
Obsolete Product(s) - Obsolete P Rthj-case Thermal resistance junction-case _____ __max
250
W
-65 to 150
°C
150
°C
Value 0.7
Unit °C/W
2/8
2ST5949
2
Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max.