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2ST5949 Datasheet

Part Number 2ST5949
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description NPN Transistor
Datasheet 2ST5949 Datasheet2ST5949 Datasheet (PDF)

2ST5949 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Typical ft = 25 MHz t(s) ■ Fully characterized at 125 oC uc Application rod ■ Audio power amplifier te P Description le The device is a NPN transistor manufactured o using new BiT-LA (Bipolar transistor for linear s amplifier) technology. The resulting transistor b shows good gain linearity behaviour. 1 2 TO-3 Figure 1. Internal schematic diagram Obsolete P.

  2ST5949   2ST5949






NPN Transistor

2ST5949 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Typical ft = 25 MHz t(s) ■ Fully characterized at 125 oC uc Application rod ■ Audio power amplifier te P Description le The device is a NPN transistor manufactured o using new BiT-LA (Bipolar transistor for linear s amplifier) technology. The resulting transistor b shows good gain linearity behaviour. 1 2 TO-3 Figure 1. Internal schematic diagram Obsolete Product(s) - O Table 1. Device summary Order code Marking Package Packaging 2ST5949 2ST5949 TO-3 tray November 2008 Rev 4 1/8 www.st.com 8 Absolute maximum ratings 1 Absolute maximum ratings 2ST5949 Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 250 V VCEO Collector-emitter voltage (IB = 0) 250 V VEBO Emitter-base voltage (IC = 0) 6 V IC Collector current 17 A ICM Collector peak current (tP < 5 ms) 34 A PTOT t(s) Tstg TJ Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature duc Table 3. Thermal data ro Symbol Parameter Obsolete Product(s) - Obsolete P Rthj-case Thermal resistance junction-case _____ __max 250 W -65 to 150 °C 150 °C Value 0.7 Unit °C/W 2/8 2ST5949 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max.


2009-06-19 : A1395    LTO30    LTO50    LM16200    TAI8555    W9864G6GH    W9864G6IH    RTD2120    TG35F    2SA1395   


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