High power NPN epitaxial planar bipolar transistor
Description
2STC4467
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = 120 V
■ Complementary to 2STA1694
■ Fast-switching speed
t(s)■ Typical ft = 20 MHz c■ Fully characterized at 125 oC roduApplications P■ Audio power amplifier leteDescription soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transist...
