2STC4468
www.datasheet4u.com
High power NPN epitaxial planar bipolar transistor
General features
■ ■ ■ ■ ■
Preliminar...
2STC4468
www.datasheet4u.com
High power NPN epitaxial planar bipolar transistor
General features
■ ■ ■ ■ ■
Preliminary data
High breakdown
voltage VCEO=140V Complementary to 2STA1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC
3 2 1
Applications
■
Audio power amplifier
TO-3P
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.
Internal schematic diagram
Order codes
Part Number 2STC4468 Marking 2STC4468 Package TO-3P Packaging Tube
Electrical ratings
June 2007
Rev 1
1/9
www.st.com 9
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
2STC4468
Table 1.
Symbol VCBO
CEO www.datasheet4u.com
Absolute maximum rating
Parameter Collector-emitter
voltage (IE = 0) Collector-emitter
voltage (IB = 0) Collector-base
voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value 200 140 6 10 20 100 -65 to 150 150 Unit V V V A A W °C °C
V
VEBO IC ICM PTOT Tstg TJ
Table 2.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case ______________ __max Value 1.25 Unit °C/W
2/9
2STC4468
Electrical characteristics
1
Electrical charact...