High power NPN epitaxial planar bipolar transistor
Description
2STC5242
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High power NPN epitaxial planar bipolar transistor
Features
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High breakdown voltage VCEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical fT = 30 MHz
3 2 1
Application
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Audio power amplifier
TO-3P
Description
This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear a...
