3418

SHENZHEN FUMAN ELECTRONICS CO., LTD. 3418 (：S&CIC0937) POWER MOSFET WAFER DATASHEET Feature  30V P-channel MOSFET High Dense Design.  Ultra low On-Resistance.  RDS(ON) <53mΩ @ VGS=-10V  RDS(ON) <65mΩ @ VGS=-4.5V  Reliable and Rugged  Gross die: 38K D 3 xxxxxx 12 GS SOT-23 Applications  Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Die Description  Wafer Diameter: 8 inchs. (±0.1 inchs)  Wafer Thickness: 8 mils. (±0.6mils)  Die Size: 960 µm ×810µm. (Including scribe line)  Scribe Line Width: 60µm  Metallization: Frontside: AL/Cu, Backside: Ti/Ni/Ag.  Metal Thickness: Frontside: 4µm, Backside: 1.4µm.  Bonding Area: Gate: 120µm ×120µm. Source: Full metalized surface of source region  Recommended Wire Bounding Gate: 1.5mil ×1 Au Source: 1.5mil ×4 Au or 2 mil ×3 Au Electrical Characteristics (Wafer Type) 1. Absolute Maximum Ratings (T...