3419

SHENZHEN CHENGXINWEI TECHNOLOGY CO., LTD. 3419 P-Channel Enhancement Mode MOSFET www.cxwic.com 18 3419 P-Channel Enhancement Mode MOSFET DATA SHEET 3419 P-Channel Enhancement Mode MOSFET www.cxwic.com 28 SHENZHEN CHENGXINWEI TECHNOLOGY CO., LTD.   The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  This  device  is  suitable  for  use  as  a  load  switch  or  in    PWM  applications.  P-Channel Enhancement Mode MOSFET     GENERAL FEATURES   RDS(ON) <  Ω @     RDS(ON) <  Ω @     High Power and current handing capability   Lead free product is acquired   Surface Mount Package    Application   PWM applications   Load switch   Power management  DFN3 X3     ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)  Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ    TSTG     IS     IDM ID    Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current① Pulse Drain Current Tested① Continuous Drain Current(VGS=-10V) ①    TC =25°C TC =25°C TC =25°C Rating ±20 -30 175 -50 to 150 -30 -100 -20 Unit V V °C °C A A A www.cxwic.com 38 SHENZHEN CHENGXINWEI TECHNOLOGY CO., LTD. P-Channel Enhancement Mode MOSFET     ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)  Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage C...