3426B Datasheet - N-Channel MOSFET

N-channel Enhancement Mode MOSFET 34246B DATASHEET 3424 DESCRIPTION The uses advanced trench technolog...

N-channel Enhancement Mode MOSFET 34246B DATASHEET 3424 DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  RDS(ON) < Ω @ VGS=4.5V RDS(ON) < Ω @ VGS=10V  High Power and current handing capability  Lead free product is acquired  Surface Mount Package D D DD Application  PWM applications  Load switch  Power management SSSG PIN1 PIN1 ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-source Voltage Gate-source Voltage Drain Current TC=25℃ TC=100℃ Pulsed Drain Current A Total Power Dissipation TC=25℃ TC=100℃ Single Pulse Avalanche Energy B Thermal Resistance Junction-to-Case C Junction and Storage Temperature Range VDS VGS ID IDM PD EAS RθJC TJ ,TSTG Limit 30 ±20 30 21 100 25 10 128 7.5 -55～+175 1 /5 Unit V V A A W W mJ ℃/ W ℃ N-channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) 34246B DATASHEET 3424 Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage BVDSS IDSS IGSS VGS(th) VGS= 0V, ID=250μA VDS=30V,VGS=0V TJ=25℃ TJ=55℃ VGS= ±20V, VDS=0V VDS= VGS, ID=250μA 30 V 1 μA 5 ±...