JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3CA8772
TRANSISTOR£¨PNP £©
...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3CA8772
TRANSISTOR£¨PNP £©
TO¡ª 126
FEATURES Power dissipation PCM : 1.25 W£¨ Tamb=25¡æ£© Collector current ICM : -3 A Collector-base
voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation
voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat)
1. EMITTER 2.COLLECTOR 3.BASE
123
unless
Test
otherwise
MIN
specified£©
TYP MAX UNIT V V V -10 -10 -10 ¦Ì A ¦Ì A ¦Ì A
conditions
Ic=-100¦Ì A £¬ IE=0 IC= -10 mA , IB=0 IE= -100 ¦Ì A£¬ IC=0 VCB= -40 V , IE=0 VCE=-30 V , IB=0 VEB=-6V , IC=0
-40 -30 -6
VCE= -2V, IC= -1A IC=-2A, IB= -0.2A VCE= -5V, I C=-0.1A
60
400 -0.5 V
Transition frequency
f
T
f = 10MHz
50
MHz
CLASSIFICATION OF h FE(1)
Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400
TO-126 PACKAGE OUTLINE DIMENSIONS
D
A1
A
E
b1 L
e e1
L1 b C Dimensions In Millimeters Min 2.500 1.100 0.660 1.170 0.450 7.400 10.600 2.290TYP 4.480 15.300 2.100 3.900 3.000 4.680 15.700 2.300 4.100 3.200 0.176 0.602 0.083 0.154 0.118 Max 2.900 1.500 0.860 1.370 0.600 7.800 11.000 Min 0.098 0.043 0.026 0.046 0.018 0.291 0.417 0.090TYP 0.184 0.618 0.091 0.161 0.126...