isc Silicon NPN Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 15(Max) @IC= 0.3A ·Excellent Safe Operating ...
isc Silicon NPN Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 15(Max) @IC= 0.3A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as an output device in complementary
audio
amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCEO Collector-Emitter
Voltage
65
V
VEBO
Emitter-Base
Voltage
4.0
V
IC
Collector Current-Continuous
0.5
A
PC
Collector Power Dissipation@TC=75℃
7.5
W
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55-175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 5.0
UNIT ℃/W
3DA76
isc website:www.iscsemi.com
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(BR) Collector-Emitter Breakdown
Voltage IC= 50mA; IB=0
VCE(sat) Collector-Emitter Saturation
Voltage
IC= 0.5A; IB=0.1A
ICBO
Emitter Cutoff current
VCE= 24V; IC=0
IEBO
Emitter Cutoff current
VEB= 4.0V; IC=0
hFE
DC Current Gain
IC=0.3A ; VCE=10V
3DA76
MIN MAX UNIT
65
V
1.5
V
1.0
mA
0.2
mA
15
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general ...