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3DD102B
Silicon NPN Power Transistor
Description
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD102B DESCRIPTION ·Collector-Emitter Breakdown
Voltage
- : V(BR)CEO= 150V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation
Voltage
- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS ·Designed for power amplifier,DC-DC converter and regulated power sup...
Inchange Semiconductor
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