3DD4515

isc Silicon NPN Power Transistor 3DD4515 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC=10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=75℃ TJ Junction Temperature 15 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.05 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 hFE1 DC Current Gain IC= 2A; VCE= 5V hFE2 DC Current Gain IC= 5A; VCE= 5V hFE3 DC Current Gain IC= 10A; VCE= 5V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A VBE(sat) Base -Emitter Saturation Voltage IC= 10A; IB= 2A tf Fall Time VCC=24V,IC=6A,IB1=-I B2=1.2A tstg ...